HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING

[1] SUPERIOR ALUMINUM FOR INTERCONNECTIONS OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (02) : 30 - &

[2] HILLOCK GROWTH IN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4339 - 4346

[3] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[4] DHEER RK, 1970, 1970 P IEEE EL COMP, P76

[5] DHEURLE F, 1968, T METALL SOC AIME, V242, P502

[6] ALUMINUM FILMS DEPOSITED BY RF SPUTTERING [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 725 - &

[7] MONOLAYER ADSORPTION OF OXYGEN ON ALUMINIUM [J]. SURFACE SCIENCE, 1971, 27 (02) : 311 - &

[8] DUSHMAN S, 1962, SCI F VACUUM TECHNIQ

[9] FAITH TJ, UNPUBLISHED

[10] HARTSOUGH LD, 7901 PERK ELM ULT DI

[1] SUPERIOR ALUMINUM FOR INTERCONNECTIONS OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (02) : 30 - &

[2] HILLOCK GROWTH IN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4339 - 4346

[3] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[4] DHEER RK, 1970, 1970 P IEEE EL COMP, P76

[5] DHEURLE F, 1968, T METALL SOC AIME, V242, P502

[6] ALUMINUM FILMS DEPOSITED BY RF SPUTTERING [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 725 - &

[7] MONOLAYER ADSORPTION OF OXYGEN ON ALUMINIUM [J]. SURFACE SCIENCE, 1971, 27 (02) : 311 - &

[8] DUSHMAN S, 1962, SCI F VACUUM TECHNIQ

[9] FAITH TJ, UNPUBLISHED

[10] HARTSOUGH LD, 7901 PERK ELM ULT DI