DEPOSITION OF THIN-FILMS OF COPPER ON SILICON SUBSTRATES AT LOW-TEMPERATURE BY THE ICB METHOD

被引:10
作者
SOSNOWSKI, M
YAMADA, I
机构
关键词
D O I
10.1016/0168-583X(89)90318-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:874 / 877
页数:4
相关论文
共 6 条
[1]   FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE [J].
RINGEISEN, F ;
DERRIEN, J ;
DAUGY, E ;
LAYET, JM ;
MATHIEZ, P ;
SALVAN, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :546-552
[2]   METALLIZATION BY IONIZED CLUSTER BEAM DEPOSITION [J].
YAMADA, I ;
TAKAGI, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) :1018-1025
[3]  
YAMADA I, 1987, MAT RES S P, V93, P253
[4]  
YAMADA I, 1989, NUCL INSTR METH B, V37
[5]  
YAMADA I, IN PRESS MATER RES B, V101, P195
[6]  
YAMADA I, 1988, 1ST P INT S ADV MAT, V88, P321