ENHANCEMENT OF ADHESION BY MEGAELECTRONVOLT ION-BOMBARDMENT

[1] BAGLIN JEE, 1984, MATER RES SOC S P, V25, P179

[2] BANWELL T, 1983, MATERIALS RES SOC S, V14, P411

[3] MEASUREMENT OF ADHESION OF THIN FILMS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 254 (1277): : 163 - 176

[4] CHOPRA KL, 1969, THIN FILM PHENOMENA, P314

[5] GRIFFITH JE, 1982, NUCL INSTRUM METHODS, V198, P27

[6] NON-REGISTERED SILICON PRODUCED AT A METAL SILICON INTERFACE BY 14 MEV OXYGEN IONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 388 - 390

[7] MENDENHALL MH, 1983, THESIS CALTECH

[8] MITCHELL IV, 1984, MATER RES SOC S P, V25, P189

[9] PAINE S, UNPUB LAYERED STRUCT

[10] TRACK DAMAGE AND EROSION OF INSULATORS BY ION-INDUCED ELECTRONIC PROCESSES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) : 555 - 563

[1] BAGLIN JEE, 1984, MATER RES SOC S P, V25, P179

[2] BANWELL T, 1983, MATERIALS RES SOC S, V14, P411

[3] MEASUREMENT OF ADHESION OF THIN FILMS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 254 (1277): : 163 - 176

[4] CHOPRA KL, 1969, THIN FILM PHENOMENA, P314

[5] GRIFFITH JE, 1982, NUCL INSTRUM METHODS, V198, P27

[6] NON-REGISTERED SILICON PRODUCED AT A METAL SILICON INTERFACE BY 14 MEV OXYGEN IONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 388 - 390

[7] MENDENHALL MH, 1983, THESIS CALTECH

[8] MITCHELL IV, 1984, MATER RES SOC S P, V25, P189

[9] PAINE S, UNPUB LAYERED STRUCT

[10] TRACK DAMAGE AND EROSION OF INSULATORS BY ION-INDUCED ELECTRONIC PROCESSES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) : 555 - 563