THEORY OF DIRECT CREATION OF QUANTUM-WELL EXCITONS BY HOLE-ASSISTED ELECTRON RESONANT-TUNNELING

We have investigated a resonant tunneling process: the direct creation of GaAs quantum well excitons through hole-assisted electron resonant tunneling. The current density of this tunneling process is on the same order of magnitude as the usual electron resonant tunneling current density. However, the two-particle nature of such a tunneling process makes it different from the conventional one-particle (electron, hole, or exciton) tunneling process, and in fact it is another type of assisted tunneling as compared with the phonon-assisted tunneling. This tunneling process may open a door toward electrically pumped excitonic cavity quantum electrodynamics and optoelectronic devices.