TIME-RESOLVED EXCITON TRANSFER IN GAAS/ALXGA1-XAS DOUBLE-QUANTUM-WELL STRUCTURES

被引：46

作者：

FERREIRA, R

ROLLAND, P

ROUSSIGNOL, P

DELALANDE, C

VINATTIERI, A

CARRARESI, L

COLOCCI, M

ROY, N

SERMAGE, B

PALMIER, JF

ETIENNE, B

机构：

[1] UNIV FLORENCE, EUROPEO SPETTROSCOPIE NONLINEARI LAB, I-50125 FLORENCE, ITALY

[2] UNIV FLORENCE, DIPARTIMENTO FIS, I-50125 FLORENCE, ITALY

[3] CTR NATL ETUD TELECOMMUN, BAGNEUX LAB, F-92220 BAGNEUX, FRANCE

[4] CNRS, MICROELECTR & MICROSTRUCT LAB, F-92220 BAGNEUX, FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.45.11782

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transfer of excitons through a barrier is studied by means of time-resolved photoluminescence in a biased GaAs/AlxGa1-xAs asymmetric double-quantum-well structure. By tuning the external electric field, the dynamics of the system is investigated in the vicinity of the resonance between the first conduction subbands of the two wells. The excitonic nature of the tunneling process at low temperature is demonstrated. A nonlinear behavior of the interwell transfer is also observed when the appearance of a crossed exciton induces a dipolar electric field. The experimental curves are quantitatively compared with a theoretical simulation of the exciton-assisted tunneling process.

引用

页码：11782 / 11794

页数：13

共 28 条

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