INFRARED ABSORPTION IN P-TYPE SEMICONDUCTORS WITH ZINCBLENDE STRUCTURE - APPLICATION TO ZINC TELLURIDE

被引:15
作者
WATANABE, N
机构
关键词
D O I
10.1143/JPSJ.21.713
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:712 / &
相关论文
共 17 条
[1]   INTERVALENCE BAND TRANSITIONS IN GALLIUM ARSENIDE [J].
BRAUNSTEIN, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :280-282
[2]   VALENCE BAND STRUCTURE OF III-V COMPOUNDS [J].
BRAUNSTEIN, R ;
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1423-&
[3]   ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J].
BRIGGS, HB ;
FLETCHER, RC .
PHYSICAL REVIEW, 1953, 91 (06) :1342-1346
[4]  
CALLAWAY J, 1957, J ELECTRONICS, V2, P330
[6]  
DRESSELHAUS, 1955, PHYS REV, V100, P580
[7]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384
[8]  
FAN HY, SOLID STATE PHYSICS, V1
[9]   THEORY OF THE INFRARED ABSORPTION OF CARRIERS IN GERMANIUM AND SILICON [J].
KAHN, AH .
PHYSICAL REVIEW, 1955, 97 (06) :1647-1652
[10]   INFRARED ABSORPTION IN P-TYPE GERMANIUM [J].
KAISER, W ;
COLLINS, RJ ;
FAN, HY .
PHYSICAL REVIEW, 1953, 91 (06) :1380-1381