CATHODOLUMINESCENCE INVESTIGATIONS OF RIE-INDUCED DEFECTS IN INP

被引：2

作者：

CHEN, BL ^{[1
]}

ECKSTEIN, M ^{[1
]}

HABERMEIER, HU ^{[1
]}

机构：

[1] CHINESE ACAD SCI,SHANGHAI INST TECH PHYS,SHANGHAI,PEOPLES R CHINA

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90163-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cathodoluminescence (CL) measurements have been performed to characterize defects in InP created by reactive ion etching (RIE) in a CH4/H2/Ar plasma. Etching of semi-insulating InP:Fe leads to an increase of CL intensity. After etching of undoped, n-type InP a reduction of band-edge as well as band-acceptor/donor-acceptor-pair emission intensity is detected. No additional emission lines due to etching-induced defects have been detected in the spectral range examined. After a few minutes of electron beam injection the band-edge luminescence recovers to its initial value. Using donor-bound exciton emission, which is especially affected by RIE, mapping of these defects is possible, showing homogeneous defect distribution. In conjunction with other measurements (conductivity, photoluminescence, electron-beam-induced current, Raman scattering, Auger electron spectroscopy depth profiling) these results indicate a nonradiative, donor-like defect created by RIE.

引用

页码：191 / 195

页数：5

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