DRY ETCHING OF POLYIMIDE IN O2-CF4 AND O2-SF6 PLASMAS

[1] MASS-SPECTRAL INTENSITIES OF INORGANIC FLUORINE-CONTAINING COMPOUNDS [J]. APPLIED SPECTROSCOPY, 1975, 29 (04) : 334 - 337

[2] BIKALES NM, 1969, ENCY POLYM SCI TECHN, P247

[3] COOMBS CF, 1978, PRINTED CIRCUITS HDB

[4] CORNU A, 1975, COMPILATION MASS SPE, V1

[5] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167

[6] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[7] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[8] FLAMM DL, 1979, SOLID STATE TECHNOL, V22, P109

[9] GILBERT R, 1979, J APPL POLYM SCI, V24, P125, DOI 10.1002/app.1979.070240111

[10] Leary H. J. Jr., 1979, Surface and Interface Analysis, V1, P75, DOI 10.1002/sia.740010302

[1] MASS-SPECTRAL INTENSITIES OF INORGANIC FLUORINE-CONTAINING COMPOUNDS [J]. APPLIED SPECTROSCOPY, 1975, 29 (04) : 334 - 337

[2] BIKALES NM, 1969, ENCY POLYM SCI TECHN, P247

[3] COOMBS CF, 1978, PRINTED CIRCUITS HDB

[4] CORNU A, 1975, COMPILATION MASS SPE, V1

[5] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167

[6] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[7] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[8] FLAMM DL, 1979, SOLID STATE TECHNOL, V22, P109

[9] GILBERT R, 1979, J APPL POLYM SCI, V24, P125, DOI 10.1002/app.1979.070240111

[10] Leary H. J. Jr., 1979, Surface and Interface Analysis, V1, P75, DOI 10.1002/sia.740010302