QUANTUM DEVICE MICROFABRICATION - RESOLUTION LIMITS OF ION-BEAM PATTERNING

被引:33
作者
SCHERER, A
ROUKES, ML
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10.1063/1.101876
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O59 [应用物理学];
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页码:377 / 379
页数:3
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共 11 条
[1]   NARROW CONDUCTING CHANNELS DEFINED BY HELIUM ION-BEAM DAMAGE [J].
CHEEKS, TL ;
ROUKES, ML ;
SCHERER, A ;
CRAIGHEAD, HG .
APPLIED PHYSICS LETTERS, 1988, 53 (20) :1964-1966
[2]  
CHEEKS TL, 1988, ADV MATERIALS PROCES
[3]   ELECTRONIC STATES IN NARROW SEMICONDUCTING WIRES NEAR THRESHOLD [J].
DAVIES, JH .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :995-1009
[4]   ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS [J].
GHANDHI, SK ;
KWAN, P ;
BHAT, KN ;
BORREGO, JM .
ELECTRON DEVICE LETTERS, 1982, 3 (02) :48-50
[5]   EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GAAS [J].
PANG, SW ;
GEIS, MW ;
EFREMOW, NN ;
LINCOLN, GA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :398-401
[6]   QUENCHING OF THE HALL-EFFECT IN A ONE-DIMENSIONAL WIRE [J].
ROUKES, ML ;
SCHERER, A ;
ALLEN, SJ ;
CRAIGHEAD, HG ;
RUTHEN, RM ;
BEEBE, ED ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1987, 59 (26) :3011-3014
[7]  
ROUKES ML, UNPUB
[8]   ULTRANARROW CONDUCTING CHANNELS DEFINED IN GAAS-ALGAAS BY LOW-ENERGY ION DAMAGE [J].
SCHERER, A ;
ROUKES, ML ;
CRAIGHEAD, HG ;
RUTHEN, RM ;
BEEBE, ED ;
HARBISON, JP .
APPLIED PHYSICS LETTERS, 1987, 51 (25) :2133-2135
[9]   ONE-DIMENSIONAL CONDUCTION IN THE 2D ELECTRON-GAS OF A GAAS-ALGAS HETEROJUNCTION [J].
THORNTON, TJ ;
PEPPER, M ;
AHMED, H ;
ANDREWS, D ;
DAVIES, GJ .
PHYSICAL REVIEW LETTERS, 1986, 56 (11) :1198-1201
[10]   QUANTUM TRANSPORT IN AN ELECTRON-WAVE GUIDE [J].
TIMP, G ;
CHANG, AM ;
MANKIEWICH, P ;
BEHRINGER, R ;
CUNNINGHAM, JE ;
CHANG, TY ;
MANKIEWICH, P ;
BEHRINGER, R ;
CUNNINGHAM, JE ;
CHANG, TY ;
HOWARD, RE .
PHYSICAL REVIEW LETTERS, 1987, 59 (06) :732-735