TRANSIENT PHOTODECAY MEASUREMENTS AS A PROBE OF THE DENSITY OF LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS

被引：10

作者：

SILVER, M ^{[1
]}

SNOW, E ^{[1
]}

ADLER, D ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 53卷 / 08期

关键词：

D O I：

10.1016/0038-1098(85)90366-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：637 / 640

页数：4

共 11 条

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[8] MONTE-CARLO SIMULATION OF ANOMALOUS TRANSIT-TIME DISPERSION OF AMORPHOUS SOLIDS [J].

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[9] DISPERSIVE TRANSPORT AND ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON ALLOYS [J].

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[10]

SILVER M, SOLID STATE COMMUN

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