CONTROL OF POLYTYPE FORMATION BY SURFACE-ENERGY EFFECTS DURING THE GROWTH OF SIC MONOCRYSTALS BY THE SUBLIMATION METHOD

SiC single crystals can be grown by a sublimation process. For electronic application, the control of the growth of a definite polytype is important. We have shown that on the (001) Si side, by sublimation growth under the given conditions, always crystallizes the 6H polytype regardless of the polytype of the seed. Under the same conditions on the (001BAR) C side, the 4H polytype crystallizes. The reason for this behaviour is thought to be the different surface energy of the Si and the C side.