DETAILED ANALYSIS OF THE AMORPHIZATION PROCESS IN LOW-TEMPERATURE ION-BOMBARDED METALLIC ALLOYS

被引：3

作者：

THOME, L

BENYAGOUB, A

PONS, F

LIGEON, E

FONTENILLE, J

DANIELOU, R

机构：

[1] GRAND ACCELERATOR NATL IONS LOURDES,F-14021 CAEN,FRANCE

[2] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1989年 / 115卷

关键词：

D O I：

10.1016/0921-5093(89)90667-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：127 / 132

页数：6

共 25 条

[1] CHANNELING STUDY OF AMORPHOUS PHASE FORMATION IN NI3B BY ION-IMPLANTATION [J].

BENYAGOUB, A ;

PIVIN, JC ;

PONS, F ;

THOME, L .

PHYSICAL REVIEW B, 1986, 34 (07) :4464-4466

[2] QUANTITATIVE-ANALYSIS OF CHANNELING DATA FOR THE DETERMINATION OF THE AMORPHOUS FRACTION IN ION BOMBARDED SINGLE-CRYSTALS [J].

BENYAGOUB, A ;

THOME, L .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1987, 105 (1-2) :9-15

[3] AMORPHIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS [J].

BENYAGOUB, A ;

THOME, L .

PHYSICAL REVIEW B, 1988, 38 (15) :10205-10216

[4]

BENYAGOUB A, 1986, THESIS U ORSAY

[5]

BERTI M, 1985, UNPUB

[6]

Brimhall J. L., 1985, Radiation Effects, V90, P241, DOI 10.1080/00337578508222535

[7]

BRIMHALL JL, 1983, RADIAT EFF DEFECT S, V77, P237, DOI 10.1080/00337578308228192

[8] TRANSFORMATION TO AMORPHOUS STATE OF METALS BY ION-IMPLANTATION - P IN NI [J].

COHEN, C ;

BENYAGOUB, A ;

BERNAS, H ;

CHAUMONT, J ;

THOME, L ;

BERTI, M ;

DRIGO, AV .

PHYSICAL REVIEW B, 1985, 31 (01) :5-14

[9] MECHANISM OF ION INDUCED AMORPHIZATION [J].

DRIGO, AV ;

BERTI, M ;

BENYAGOUB, A ;

BERNAS, H ;

PIVIN, JC ;

PONS, F ;

THOME, L ;

COHEN, C .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :533-537

[10] MECHANISMS OF PHASE-TRANSFORMATION IN LOW-TEMPERATURE IRRADIATED NIAL [J].

JAOUEN, C ;

RIVIERE, JP ;

DELAFOND, J ;

THOME, L ;

PONS, F ;

DANIELOU, R ;

FONTENILLE, J ;

LIGEON, E .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1499-1504

← 1 2 3 →