MODULATED-REFLECTANCE SPECTROSCOPY OF INP DOPING SUPERLATTICES

被引：17

作者：

GAL, M ^{[1
]}

YUAN, JS ^{[1
]}

VINER, JM ^{[1
]}

TAYLOR, PC ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT MAT SCI,SALT LAKE CITY,UT 84112

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4410 / 4413

页数：4

共 19 条

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[8] ELECTRONIC STATES AND THICKNESSES OF GAAS/GAALAS QUANTUM WELLS AS MEASURED BY ELECTROREFLECTANCE AND SPECTROSCOPIC ELLIPSOMETRY
ERMAN, M
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) : 3241 - 3249
[9] PHOTOREFLECTANCE CHARACTERIZATION OF INTERBAND-TRANSITIONS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND MODULATION-DOPED HETEROJUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 970 - 972
[10] NEW LONG-WAVELENGTH PHOTODETECTOR BASED ON REVERSE-BIASED DOPING SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 919 - 921

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