ASYMMETRIC QUANTUM WELL ELECTRON BARRIER DIODE

被引：9

作者：

KIRCHOEFER, SW

NEWMAN, HS

COMAS, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：855 / 857

页数：3

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[2] NEGATIVE DIFFERENTIAL RESISTANCE AT 300-K IN A SUPERLATTICE QUANTUM STATE TRANSFER DEVICE
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[3] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
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[J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
[4] MAJORITY-CARRIER CAMEL DIODE
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 63 - 65
[5] SZE SM, 1981, PHYSICS SEMICONDUCTO