MICROSTRUCTURE DEVELOPMENT IN RUO2-GLASS THICK-FILM RESISTORS AND ITS EFFECT ON THE ELECTRICAL-RESISTIVITY

被引：14

作者：

YAMAGUCHI, T

IIZUKA, K

机构：

[1] Faculty of Science and Technology, Keio University, Yakohama

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 07期

关键词：

electrical resistivity; films; glass; microstructure; ruthenium;

D O I：

10.1111/j.1151-2916.1990.tb05251.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microstructure development in RuO2‐glass thick‐film resistors has been studied by optical microscopy with special emphasis on the effect of glass particle size and mixing and firing conditions. The microstructure development has been characterized by the coalescence of glass grains, infiltration of glass into RuO2 particle aggregates, and agglomeration of RuO2 particles. The resistivity‐firing temperature relationship has been correlated with the microstructure development. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：1953 / 1957

页数：5

共 9 条

[1]

BIGGERS JV, 1982, J AM CERAM SOC, V65, pC13, DOI 10.1111/j.1151-2916.1982.tb09932.x

[2]

CHITALE SM, 1988, IEEE T COMPON HYBR, V11, P604, DOI 10.1109/33.16704

[3]

IIZUKA K, 1988, 5TH P INT MICR C TOK, P64

[4] THE MICROSTRUCTURE OF RUO2 THICK-FILM RESISTORS AND THE INFLUENCE OF GLASS PARTICLE-SIZE ON THEIR ELECTRICAL-PROPERTIES [J].