NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT

被引:7
作者
DESETA, M
WANG, SL
NARDUCCI, P
EVANGELISTI, F
机构
[1] Department of Physics, University La Sapienza, 00185 Roma
关键词
D O I
10.1016/S0022-3093(05)80253-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It is shown that the local density of states in a Si1-xCx:H can be investigated by combining information from Auger effect, which is site specific, with those from photoemission spectra. In the diluted C regime, it is found that the C centered states with dominant s-like character are localized and lie below the bottom of the dominant Si-Si valence band. The onset of the C centered states with dominant p-like character is placed below the top of the Si valence band. This last result shows that carbon atoms act as strong scattering centers for holes.
引用
收藏
页码:851 / 854
页数:4
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