NATURAL AND ACTUAL VALENCE-BAND DISCONTINUITIES IN THE A-SI/A-SI1-XCX-H SYSTEM - A PHOTOEMISSION-STUDY

被引：76

作者：

FANG, RC ^{[1
]}

LEY, L ^{[1
]}

机构：

[1] MAX PLANCK INST,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.40.3818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3818 / 3829

页数：12

共 52 条

[1]

ABELES B, 1984, AIP CONF PR, V120, P394

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[3] PHOTOEMISSION-STUDY OF SIOX (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 2) ALLOYS [J].

BELL, FG ;

LEY, L .

PHYSICAL REVIEW B, 1988, 37 (14) :8383-8393

[4] PHOTOEMISSION STUDIES OF GRAPHITE HIGH-ENERGY CONDUCTION-BAND AND VALENCE-BAND STATES USING SOFT-X-RAY SYNCHROTRON RADIATION EXCITATION [J].

BIANCONI, A ;

HAGSTROM, SBM ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1977, 16 (12) :5543-5548

[5] SIMPLIFIED LCAO METHOD FOR ZINCBLENDE, WURTZITE, AND MIXED CRYSTAL STRUCTURES [J].

BIRMAN, JL .

PHYSICAL REVIEW, 1959, 115 (06) :1493-1505

[6] ELUCIDATION OF SURFACE-STRUCTURE AND BONDING BY PHOTOELECTRON-SPECTROSCOPY [J].

BRUNDLE, CR .

SURFACE SCIENCE, 1975, 48 (01) :99-136

[7] PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS [J].

BULLOT, J ;

SCHMIDT, MP .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 143 (02) :345-418

[8] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[9] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[10] POSSIBILITY OF HETEROSTRUCTURE BAND OFFSETS AS BULK PROPERTIES - TRANSITIVITY RULE AND ORIENTATION EFFECTS [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 38 (17) :12687-12690

← 1 2 3 4 5 6 →