Properties of ferroelectric (Pb,La)(Zr,Ti)O-3 thin films by MOCVD

被引：5

作者：

Shimizu, M

Fujisawa, H

Shiosaki, T

机构：

[1] Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku

来源：

INTEGRATED FERROELECTRICS | 1995年 / 10卷 / 1-4期

关键词：

D O I：

10.1080/10584589508012260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Pb,La)TiO3 (PLT) and (Pb,La)(Zr,Ti)O-3 (PLZT) thin films were successfully grown by MOCVD, using (C2H5)(3)PbOCH2C(CH3)(3), La(dpm)(3), Zr(O-t-C4H9)(4) and Ti(O-i-C3H7)(4) as precursors. The PLT and PLZT thin films showed good dielectric and ferroelectric properties. PLZT films showed better fatigue properties than PZT films. Large area growth of PLZT thin films on a 6 inch silicon wafer was carried out and uniform PLZT films with a variation in film thickness of +/-1.5% could be obtained. The case of La(i-C3H7C5H4)(3) as a new La precursor for growing PLT and PLZT will be discussed.

引用

页码：23 / 30

页数：8

共 21 条

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