VACANCIES AND HYDROGEN ADSORPTION AT GAAS(110) - THEORETICAL-MODEL STUDIES OF THE ELECTRONIC-STRUCTURE

被引：10

作者：

BEYER, J ^{[1
]}

KRUGER, P ^{[1
]}

MAZUR, A ^{[1
]}

POLLMANN, J ^{[1
]}

机构：

[1] UNIV LIEGE,INST PHYS,B-4000 LIEGE,BELGIUM

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：358 / 363

页数：6

共 22 条

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES
ALLEN, RE
DOW, JD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387
[2] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2527 - 2538
[3] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS
BACHELET, GB
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 915 - 925
[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[5] BERTONI CM, 1982, J VAC SCI TECHNOL, V21
[6] BEYER J, UNPUB
[7] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
CHIANG, TC
KNAPP, JA
AONO, M
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3513 - 3522
[8] VACANCIES NEAR SEMICONDUCTOR SURFACES
DAW, MS
SMITH, DL
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156
[9] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES
DAW, MS
SMITH, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1028 - 1031
[10] SURFACE VACANCIES IN II-VI AND III-V ZINC BLENDE SEMICONDUCTORS
DAW, MS
SMITH, DL
SWARTS, CA
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 508 - 512