EFFECTS OF RADIATION-DAMAGE ON PROPERTIES OF NI-NGAAS SCHOTTKY DIODES .2. TERMINAL CHARACTERISTICS

被引：25

作者：

TAYLOR, PD ^{[1
]}

MORGAN, DV ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(76)90011-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 488

页数：8

共 16 条

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[4] Grove A. S., 1967, PHYS TECHNOL S, P180
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[8] SCHOTTKY-BARRIER ANOMALIES AND INTERFACE STATES
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3991 - +
[9] METAL-SEMICONDUCTOR SURFACE BARRIERS
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[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &
[10] MOLL JL, 1964, PHYSICS SEMICONDUCTO, P128