STUDY OF THE KINETICS OF GA ON STRAINED GAAS(001) SURFACE USING ATOMIC POTENTIALS

被引：18

作者：

GHAISAS, SV

机构：

来源：

SURFACE SCIENCE | 1989年 / 223卷 / 03期

关键词：

D O I：

10.1016/0039-6028(89)90672-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

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页码：441 / 448

页数：8

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