LOW THRESHOLD INGAASP/INP LASERS WITH MICROCLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION

被引：12

作者：

KOREN, U

HASSON, A

YU, KL

CHEN, TR

MARGALIT, S

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.93705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：791 / 793

页数：3

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[1] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION
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[2] MONOLITHIC GA1-XINX AS MESA LASERS WITH GROWN OPTICAL FACETS
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[3] CHEMICALLY ETCHED-MIRROR GALNASP/INP LASERS - REVIEW
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[4] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING
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[5] SINGLE-WAVELENGTH OPERATION OF 1.53-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE INTEGRATED TWIN-GUIDE LASER WITH DISTRIBUTED BRAGG REFLECTOR UNDER DIRECT MODULATION UP TO 1 GHZ
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[J]. ELECTRONICS LETTERS, 1981, 17 (11) : 368 - 369
[6] ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE
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[J]. ELECTRONICS LETTERS, 1982, 18 (05) : 189 - 190
[7] GROOVE GAINASP LASER ON SEMI-INSULATING INP
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[J]. ELECTRONICS LETTERS, 1981, 17 (21) : 790 - 792