DETERMINATION OF CONCENTRATIONS OF DONORS AND ACCEPTORS IN GAAS BY AN OPTICAL METHOD

被引：15

作者：

NAM, SB

LANGER, DW

KINGSTON, DL

LUCIANO, MJ

机构：

[1] UNIV DAYTON,DEPT PHYS,DAYTON,OH 45469

[2] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

[3] SYST RES LABS,DAYTON,OH 45440

来源：

关键词：

D O I：

10.1063/1.89512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：652 / 654

页数：3

共 9 条

[1] BEBB HB, 1975, SEMICONDUCTORS SEMIM, V8, P181
[2] OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE
KAMIYA, T
WAGNER, E
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1928 - 1934
[3] KITTEL C, 1964, QUANTUM THEORY SOLID, P283
[4] LUCIANO MJ, 1977, REV SCI INSTRUM, V48, P30
[5] NAM SB, UNPUBLISHED
[6] Rode D. L., 1975, SEMICONDUCT SEMIMET, V10, P1
[7] SCHIFF LI, 1966, QUANTUM MECHANICS, pCH10
[8] WAGNER E, UNPUBLISHED
[9] WOLFE CM, 1975, SEMICONDUCT SEMIMET, V10, P175