GROWTH OF LOW DISLOCATION DENSITY GAAS BY AS PRESSURE-CONTROLLED CZOCHRALSKI METHOD

被引：28

作者：

TOMIZAWA, K ^{[1
]}

SASSA, K ^{[1
]}

SHIMANUKI, Y ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] RES DEV CORP JAPAN,SEMICOND RES INST,NISHIZAWA PERFECT CRYSTAL PROJECT,SENDAI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115264

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2394 / 2397

页数：4

共 12 条

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