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GROWTH AND CHARACTERIZATION OF III-VI-LAYERED CRYSTALS LIKE GASE, GATE, INSE, GASE1-XTEX AND GAXIN1-XSE

被引：110
作者：
GOUSKOV, A
CAMASSEL, J
GOUSKOV, L
机构：
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1982年 / 5卷 / 04期
关键词：
D O I：
10.1016/0146-3535(82)90004-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：323 / 413
页数：91
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