GROWTH AND CHARACTERIZATION OF III-VI-LAYERED CRYSTALS LIKE GASE, GATE, INSE, GASE1-XTEX AND GAXIN1-XSE

被引:110
作者
GOUSKOV, A
CAMASSEL, J
GOUSKOV, L
机构
来源
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1982年 / 5卷 / 04期
关键词
D O I
10.1016/0146-3535(82)90004-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:323 / 413
页数:91
相关论文
共 138 条
[11]  
ALUSUISSE SA, GALLIUM, V9
[12]   ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .2. PHOTOEMISSION [J].
ANTONANGELI, F ;
PIACENTINI, M ;
BALZAROTTI, A ;
GRASSO, V ;
GIRLANDA, R ;
DONI, E .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01) :181-197
[13]  
ATAKISHIEV SM, 1969, PHYS STATUS SOLIDI, V32, pK33
[14]   HALL-MOBILITY ANISOTROPY IN GASE [J].
AUGELLI, V ;
MANFREDOTTI, C ;
MURRI, R ;
VASANELLI, L .
PHYSICAL REVIEW B, 1978, 17 (08) :3221-3226
[15]   HALL-EFFECT IN GATE SINGLE-CRYSTALS [J].
AUGELLI, V ;
MANFREDOTTI, C ;
MURRI, R ;
PICCOLO, R ;
RIZZO, A ;
VASANELLI, L .
SOLID STATE COMMUNICATIONS, 1977, 21 (06) :575-578
[16]   PHOTOMAGNETOELECTRIC EFFECT IN N-GASE SINGLE-CRYSTAL IN PRESENCE OF TRAPS [J].
AUGELLI, V ;
MURRI, R ;
PICCOLO, R ;
VASANELLI, L .
PHYSICA B & C, 1980, 99 (1-4) :303-308
[17]   INDIRECT ENERGY GAP IN GASE AND GAS [J].
AULICH, E ;
BREBNER, JL ;
MOOSER, E .
PHYSICA STATUS SOLIDI, 1969, 31 (01) :129-&
[18]  
BABAEV BK, 1964, T I KHIM AKAD NAUK A, V20, P169
[19]  
BAKUMENKO VL, 1978, SOV PHYS SEMICOND+, V12, P216
[20]  
BAKUMENKO VL, 1977, SOV PHYS SEMICOND+, V11, P1171