PHOTOMAGNETOELECTRIC EFFECT IN N-GASE SINGLE-CRYSTAL IN PRESENCE OF TRAPS

被引：4

作者：

AUGELLI, V ^{[1
]}

MURRI, R ^{[1
]}

PICCOLO, R ^{[1
]}

VASANELLI, L ^{[1
]}

机构：

[1] GRP NAZL STRUTTURA MAT,BARI,ITALY

来源：

PHYSICA B & C | 1980年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0378-4363(80)90250-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：303 / 308

页数：6

共 12 条

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[4]

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[8] INVESTIGATION OF RECOMBINATION AND TRAPPING PROCESSES OF PHOTOINJECTED CARRIERS IN SEMI-INSULATING CR-DOPED GAAS USING PME AND PC METHODS [J].

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[9] PHOTOELECTRONIC PROPERTIES OF N-GASE1 [J].

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[10] ANISOTROPY OF PHOTOMAGNETOELECTRIC EFFECT IN MERCURY IODIDE [J].

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