INVESTIGATION OF RECOMBINATION AND TRAPPING PROCESSES OF PHOTOINJECTED CARRIERS IN SEMI-INSULATING CR-DOPED GAAS USING PME AND PC METHODS

被引：40

作者：

LI, SS

HUANG, CI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期

关键词：

D O I：

10.1063/1.1661390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1757 / &

共 15 条

[1] LOW-TEMPERATURE PHOTOMAGNETOELECTRIC PROPERTIES OF GOLD-DOPED TYPE SILICON [J].

AGRAZG, J ;

LI, SS .

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[2] RECOMBINATION AND TRAPPING PROCESSES OF INJECTED CARRIERS IN GOLD-DOPED SILICON AT LOW TEMPERATURES [J].

AGRAZGUE.J ;

LI, SS .

PHYSICAL REVIEW B, 1970, 2 (12) :4966-&

[3] PHOTOCONDUCTIVITY OF CHROMIUM-DOPED GALLIUM ARSENIDE [J].

BROOM, RF .

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[4] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J].

BUBE, RH .

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[5] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].

CRONIN, GR ;

HAISTY, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877

[6] PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE [J].

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :19-24

[7] DEMBER AND PHOTOELECTROMAGNETIC EFFECTS IN SEMI-INSULATING GALLIUM ARSENIDE [J].

HURD, CM .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (507) :42-&

[8] ON TEMPERATURE DEPENDENCE OF MIXED CONDUCTION IN CR-DOPED GAAS [J].

INOUE, T ;

OHYAMA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (16) :1309-&

[9] EFFECTS OF TEMPERATURE, PHOTOINJECTION, AND MAGNETIC FIELD ON PHOTOMAGNETOELECTRIC RESPONSE IN AS-DOPED SI [J].

LI, SS .

PHYSICAL REVIEW, 1969, 188 (03) :1246-&

[10]

LI SS, 1971, PHYS REV B, V2, P490

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