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RECOMBINATION AND TRAPPING PROCESSES OF INJECTED CARRIERS IN GOLD-DOPED SILICON AT LOW TEMPERATURES

被引：9
作者：
AGRAZGUE.J
LI, SS
机构：
来源：
PHYSICAL REVIEW B | 1970年 / 2卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.2.4966
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：4966 / &
相关论文
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[6]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
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