LOW-TEMPERATURE PHOTOMAGNETOELECTRIC PROPERTIES OF GOLD-DOPED TYPE SILICON

被引：17

作者：

AGRAZG, J

LI, SS

机构：

来源：

PHYSICAL REVIEW B | 1970年 / 2卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.2.1847

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：1847 / &

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