LOW-TEMPERATURE HALL COEFFICIENT AND CONDUCTIVITY IN HEAVILY DOPED SILICON

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BROOKS H, 1956, ADV ELECTRONICS ELEC, V7, P87

[3] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[4] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[5] CARLSON RD, 1956, PHYS REV, V100, P1075

[6] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[7] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[10] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (04): : 726 - 727

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BROOKS H, 1956, ADV ELECTRONICS ELEC, V7, P87

[3] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[4] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[5] CARLSON RD, 1956, PHYS REV, V100, P1075

[6] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[7] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[10] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (04): : 726 - 727