共 16 条
[1]
BUOT FA, 1983, SOLID STATE ELECTRON, V26, P617, DOI 10.1016/0038-1101(83)90016-3
[2]
DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS
[J].
ELECTRON DEVICE LETTERS,
1982, 3 (06)
:152-155
[3]
INTRINSIC LIMITATIONS ON THE HIGH-SPEED PERFORMANCE OF HIGH ELECTRON-MOBILITY TRANSISTORS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1983, 22 (02)
:L82-L84
[5]
ELECTRON-TRANSPORT IN HETEROJUNCTIONS AND SUPER-LATTICES
[J].
PHYSICA B & C,
1983, 117 (MAR)
:723-728
[8]
KEEVER M, 1982, THESIS U ILLINOIS
[9]
HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981, 20 (08)
:L598-L600