A SIMPLE RELATION BETWEEN TRANSVERSE MAGNETORESISTANCE AND HALL-EFFECT IN BISMUTH LIGHTLY DOPED WITH TIN

被引：2

作者：

HANSEN, OP ^{[1
]}

HEREMANS, J ^{[1
]}

LINDELOF, PE ^{[1
]}

机构：

[1] CATHOLIC UNIV LOUVAIN,PCES LAB,B-1348 LOUVAIN LA NEUVE,BELGIUM

来源：

关键词：

D O I：

10.1016/0038-1098(82)90642-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：705 / 708

页数：4

共 7 条

[1]

BLATT FJ, 1968, PHYSICS ELECTRONIC C, P291

[2] LOW-TEMPERATURE THERMOELECTRIC PROPERTIES OF TIN-DOPED BISMUTH [J].

BOXUS, J ;

HEREMANS, J ;

MICHENAUD, JP ;

ISSI, JP .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1979, 9 (12) :2387-2398

[3]

FISHER G, 1960, HELV PHYS ACTA, V33, P463

SNODGRASS, ML ;

BLATT, FJ ;

OPSAL, JL ;

CHIANG, CK .

[5]

VANGOOR JMN, 1971, PHYSICS SEMIMETALS N, P63

[6]

VANGOOR JMN, 1971, PHILIPS RES REPTS S, V4

[7]

ZIMAN JM, 1960, ELECTRONS PHONONS, P518