HYDROGEN-ACCEPTOR INTERACTION IN CDTE AND ZNTE STUDIES BY PHOTOLUMINESCENCE

被引：38

作者：

SVOB, L

MARFAING, Y

机构：

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 06期

关键词：

D O I：

10.1016/0038-1098(86)90801-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：343 / 346

页数：4

相关论文

共 6 条

[1] PROPERTIES OF NITROGEN ACCEPTOR IN CDTE - ENERGY-SPECTRUM AND INTERACTION WITH HYDROGEN
BOUDOUKHA, A
LEGROS, R
SVOB, L
MARFAING, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 226 - 231
[2] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN
CHEVALLIER, J
DAUTREMONTSMITH, WC
TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110
[3] GIBBONS JF, 1975, PROJECTED RANGE STAT
[4] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[5] HYDROGEN LOCALIZATION NEAR BORON IN SILICON
PANKOVE, JI
ZANZUCCHI, PJ
MAGEE, CW
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 421 - 423
[6] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
WANCE, RO
BERKEYHEISER, JE
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1100 - 1102