POLARIZATION INSENSITIVE 1.55-MU-M SEMICONDUCTOR INTEGRATED OPTICAL AMPLIFIER WITH ACCESS WAVE-GUIDES GROWN BY LP-MOCVD

被引：10

作者：

GLASTRE, G

RONDI, D

ENARD, A

BLONDEAU, R

机构：

[1] Thomson-CSF Laboratoire Central de Recherches Domaine de Corbeville, Orsay Cedex

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

INTEGRATED OPTICS; AMPLIFIERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.55-mu-m GaInAsP/InP optical amplifier integrated with access waveguides provides 0 dB fibre to fibre gain at only 47 mA bias current and a 5 dB saturation gain already high enough to design 0 dB integrated complex circuits. Polarisation gain dependence and gain ripple are less than 0.5 dB and 0.7 dB, respectively.

引用

页码：899 / 900

页数：2

共 6 条

[1] ELECTRO-OPTICAL MODULATORS USING NOVEL BURIED WAVE-GUIDES IN GAINASP-INP MATERIAL
BOURBIN, Y
ENARD, A
BLONDEAU, R
RAZEGHI, M
RONDI, D
PAPUCHON, M
DECREMOUX, B
[J]. ELECTRONICS LETTERS, 1988, 24 (04) : 221 - 223
[2] 1.5-MU-M BAND TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS WITH WINDOW FACET STRUCTURE
CHA, I
KITAMURA, M
HONMOU, H
MITO, I
[J]. ELECTRONICS LETTERS, 1989, 25 (18) : 1241 - 1242
[3] DEVLIN WJ, 1989, JUL P IOOC 89 KOB
[4] ULTRA-LOW-REFLECTIVITY SEMICONDUCTOR OPTICAL AMPLIFIERS WITHOUT ANTIREFLECTION COATINGS
RIDEOUT, W
HOLMSTROM, R
LACOURSE, J
MELAND, E
POWAZINIK, W
[J]. ELECTRONICS LETTERS, 1990, 26 (01) : 36 - 38
[5] THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS
SAITOH, T
MUKAI, T
MIKAMI, O
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 288 - 293
[6] WANG Z, 1990, P INT SEMIC LASER C

← 1 →