VALLEY OCCUPANCY TRANSITION IN SI INVERSION-LAYERS

被引：10

作者：

ISIHARA, A

IORIATTI, LC

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5534

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5534 / 5537

页数：4

共 9 条

[1] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].

BLOSS, WL ;

SHAM, LJ ;

VINTER, V .

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[2]

CHANG KM, 1980, PHYS REV LETT, V44, P1472

[3] EVIDENCE FOR A VALLEY-OCCUPANCY TRANSITION IN SI INVERSION-LAYERS AT LOW ELECTRON-DENSITIES [J].

COLE, T ;

MCCOMBE, BD ;

QUINN, JJ ;

KALIA, RK .

PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1096-1099

[4] EXACT EVALUATION OF THE 2ND-ORDER EXCHANGE ENERGY OF A TWO-DIMENSIONAL ELECTRON FLUID [J].

ISIHARA, A ;

IORIATTI, L .

PHYSICAL REVIEW B, 1980, 22 (01) :214-219

[5]

ISIHARA A, 1978, ANN PHYS-NEW YORK, V114, P497

[6] APPLICATION OF A DIELECTRIC FUNCTION TO THE EXCHANGE ENERGY AND SPECIFIC-HEAT OF A 2-DIMENSIONAL ELECTRON-GAS [J].

ISIHARA, A ;

IORIATTI, LC .

PHYSICA A, 1980, 103 (03) :621-629

[7] CORRELATION ENERGY OF 2-D ELECTRONS [J].

ISIHARA, A ;

TOYODA, T .

ANNALS OF PHYSICS, 1977, 106 (02) :394-406

[8]

ISIHARA A, UNPUB

[9]

KAWAJI S, 1980, 3RD P INT C EL PROP

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