HYDROGENATED AMORPHOUS-SILICON ELECTROLYTE CONTACTS - BAND BENDING AND PHOTORESPONSE DEPENDENCE ON SURFACE-REACTIONS

被引：7

作者：

AYERS, WM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6911 / 6918

页数：8

共 18 条

[1] CAPTURE CROSS-SECTION AND DENSITY OF DEEP GAP STATES IN A-SIHX SCHOTTKY-BARRIER STRUCTURES [J].

ABELES, B ;

WRONSKI, CR ;

GOLDSTEIN, Y ;

CODY, GD .

SOLID STATE COMMUNICATIONS, 1982, 41 (03) :251-253

[2]

Carlson D. E., 1979, Amorphous semiconductors, P287

[3]

Carlson D. E., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P291

[4] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J].

CHAZALVIEL, JN .

SURFACE SCIENCE, 1979, 88 (01) :204-220

[5] OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS [J].

CODY, GD ;

WRONSKI, CR ;

ABELES, B ;

STEPHENS, RB ;

BROOKS, B .

SOLAR CELLS, 1980, 2 (03) :227-243

[6]

Crowley A. M., 1965, J APPL PHYS, V36, P3212

[7] THEORY OF HYDROGENATED SILICON [J].

ECONOMOU, EN ;

PAPACONSTANTOPOULOS, DA .

PHYSICAL REVIEW B, 1981, 23 (04) :2042-2045

[8] CARRIER COLLECTION EFFICIENCY OF A-SIHX SCHOTTKY-BARRIER SOLAR-CELLS [J].

GUTKOWICZKRUSIN, D ;

WRONSKI, CR ;

TIEDJE, T .

APPLIED PHYSICS LETTERS, 1981, 38 (02) :87-89

[9] SILICON PHOTO-CATHODE BEHAVIOR IN ACIDIC V(II)-V(III) SOLUTIONS [J].

HELLER, A ;

LEWERENZ, HJ ;

MILLER, B .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (01) :200-201

[10] PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS [J].

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :935-942

← 1 2 →