THEORY OF HYDROGENATED SILICON

被引：40

作者：

ECONOMOU, EN ^{[1
]}

PAPACONSTANTOPOULOS, DA ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.23.2042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2042 / 2045

页数：4

共 24 条

[1]

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[7]

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[9] THEORETICAL-MODELS FOR THE ELECTRONIC-STRUCTURES OF HYDROGENATED AMORPHOUS-SILICON [J].

JOHNSON, KH ;

KOLARI, HJ ;

DENEUFVILLE, JP ;

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PHYSICAL REVIEW B, 1980, 21 (02) :643-647

[10] ELECTRONIC-STRUCTURE OF THE JAHN-TELLER DISTORTED VACANCY IN SILICON [J].

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BERNHOLC, J ;

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PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1354-1357

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