LOCALIZED-ORBITAL DESCRIPTION OF WAVE-FUNCTIONS AND ENERGY-BANDS IN SEMICONDUCTORS

被引：101

作者：

CHADI, DJ ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.16.3572

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3572 / 3578

页数：7

共 37 条

[1] INTRINSIC (111) SURFACE STATES OF GE, GAAS, AND ZNSE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1975, 11 (02) :732-737

[2] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[3] ANGULAR-MOMENTUM DECOMPOSITION OF K=O BLOCH FUNCTIONS IN GROUP 4 AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ .

SOLID STATE COMMUNICATIONS, 1976, 20 (04) :361-364

[4] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[5] CALCULATION OF LATTICE DYNAMICAL PROPERTIES FROM ELECTRONIC ENERGIES - APPLICATION TO C, SI AND GE [J].

CHADI, DJ ;

MARTIN, RM .

SOLID STATE COMMUNICATIONS, 1976, 19 (07) :643-646

[6] APPLICATION OF GAUSSIAN-TYPE ORBITALS FOR CALCULATING ENERGY BAND STRUCTURES OF SOLIDS BY METHOD OF TIGHT BINDING [J].

CHANEY, RC ;

TUNG, TK ;

LIN, CC ;

LAFON, EE .

JOURNAL OF CHEMICAL PHYSICS, 1970, 52 (01) :361-&

[7] APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS [J].

CHANEY, RC ;

LIN, CC ;

LAFON, EE .

PHYSICAL REVIEW B, 1971, 3 (02) :459-&

[8]

Clementi E., 1974, Atomic Data and Nuclear Data Tables, V14, P177, DOI 10.1016/S0092-640X(74)80016-1

[9]

Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[10] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

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