CONDUCTION PROPERTIES OF THIN AL2O3 FILMS

被引：6

作者：

ARYA, SPS ^{[1
]}

SINGH, HP ^{[1
]}

机构：

[1] PUNJABI UNIV,DEPT PHYS,PATIALA 147002,PUNJAB,INDIA

来源：

THIN SOLID FILMS | 1982年 / 91卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90260-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：363 / 374

页数：12

共 22 条

[1] SCHOTTKY FIELD EMISSION THROUGH AL-AL2O3-AL STRUCTURES [J].

ANTULA, J .

PHYSICS LETTERS A, 1967, A 25 (04) :309-&

[2] ELECTRON-TRANSPORT MECHANISMS IN VERY THIN AL-2O-3 FILMS [J].

BARDHAN, AR ;

SRIVASTAVA, PC ;

CHATTERJEE, A ;

BHATTACHARYA, DL .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1976, 40 (04) :313-321

[3]

BARDHAN AR, 1975, THIN SOLID FILMS, V28, P237, DOI 10.1016/0040-6090(75)90113-3

[4]

CONDON EU, 1958, HDB PHYSICS, pCH6

[5] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J].

DAHLKE, WE ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1967, 10 (08) :865-&

[6] SCHOTTKY EMISSION THROUGH THIN INSULATING FILMS [J].

EMTAGE, PR ;

TANTRAPORN, W .

PHYSICAL REVIEW LETTERS, 1962, 8 (07) :267-&

[7] TUNNELING THROUGH THIN INSULATING LAYERS [J].

FISHER, JC ;

GIAEVER, I .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) :172-&

[8] Electron emission in intense electric fields [J].

Fowler, RH ;

Nordheim, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181

[9] ELECTRIC-FIELD PENETRATION INTO ELECTRODES OBSERVED BY ELECTRON TUNNELING THROUGH A DIELECTRIC LAYER [J].

GUNDLACH, KH .

PHYSICS LETTERS A, 1967, A 24 (13) :731-&

[10]

GUNDLACH KH, 1966, BASIC PROBLEMS THIN, P696

← 1 2 3 →