TUNNELING IN 3-V COMPOUND P-N JUNCTIONS

被引：26

作者：

SHEWCHUN, J

WILLIAMS, RM

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.15.160

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：160 / &

共 11 条

[1]

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[2]

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[3]

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[4] CONDUCTANCE ANOMALIES IN SEMICONDUCTOR TUNNEL DIODES [J].

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ROWELL, JM .

[5]

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[6]

PATTERSON WR, 1964, REV SCI INSTR, V34, P1704

[7]

STRONGIN M, PRIVATE COMMUNICATIO

[8] TUNNELING IN LEAD SALT P-N JUNCTIONS [J].

WILLIAMS, RM ;

SHEWCHUN, J .

[9]

WILLIAMS RW, TO BE PUBLISHED

[10] ANOMALOUS DENSITIES OF STATES IN NORMAL TANTALUM + NIOBIUM [J].

WYATT, AFG .