HETEROEPITAXIAL GROWTH AND CHARACTERIZATION OF GAAS ON SILICON-ON-SAPPHIRE AND SAPPHIRE SUBSTRATES

被引：19

作者：

HUMPHREYS, TP

MINER, CJ

POSTHILL, JB

DAS, K

SUMMERVILLE, MK

NEMANICH, RJ

SUKOW, CA

PARIKH, NR

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[3] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

[4] N CAROLINA STATE UNIV,DEPT PHYS & ASTRON,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 17期

关键词：

D O I：

10.1063/1.101303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1687 / 1689

页数：3

共 16 条

[11] OBSERVATION OF ANTIPHASE DOMAIN BOUNDARIES IN GAAS ON SILICON BY TRANSMISSION ELECTRON-MICROSCOPY [J].

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PARIKH, NR .

APPLIED PHYSICS LETTERS, 1988, 53 (13) :1207-1209

[12]

SHELDON P, 1985, J APPL PHYS, V58, P1486

[13] RAMAN-STUDY OF POLISH-INDUCED SURFACE STRAIN IN [100] GAAS AND INP [J].

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[14] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SISKOS, S ;

FONTAINE, C ;

MUNOZYAGUE, A .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1146-1148

[15]

SUMMERVILLE MK, IN PRESS J ELECTRON

[16] MINORITY-CARRIER LIFETIME MEASUREMENTS AND DEFECT-STRUCTURE IDENTIFICATION FOR GALLIUM-ARSENIDE GROWN ON SAPPHIRE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

TIMMONS, ML ;

AHRENKIEL, RK ;

ALJASSIM, MM ;

DUNLAVY, DJ .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6259-6263

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