ON THE THEORY OF TRANSIENT ENHANCED DIFFUSION IN BORON-IMPLANTED SILICON

被引：9

作者：

ANTONCIK, E

机构：

[1] Institute of Physics, Aarhus University, Aarhus C, DK

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1991年 / 116卷 / 04期

关键词：

BORON; SILICON; DIFFUSION; IMPLANTATION; THERMAL ANNEALING;

D O I：

10.1080/10420159108220743

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. © 1991 Gordon and Breach. S.A.

引用

页码：375 / 387

页数：13

共 26 条

[1]

Abramowitz M., 1968, HDB MATH FUNCTIONS

[2]

ADLER D, 1985, PHYSICAL PROPERTIES

[3]

[Anonymous], 1963, KGL DANSKE VIDENSKAB

[4]

Antoncik E., 1986, Radiation Effects, V88, P217, DOI 10.1080/00337578608207481

[5] ON THE LATTICE LOCATION OF IMPLANTED IMPURITIES IN SILICON [J].

ANTONCIK, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 14 (02) :193-203

[6]

ANTONCIK E, 1990, 1989 P INT C SCI TEC, P471

[7]

BORG RJ, 1988, INTRO SOLID STATE DI

[8] TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].

CHO, K ;

NUMAN, M ;

FINSTAD, TG ;

CHU, WK ;

LIU, J ;

WORTMAN, JJ .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323

[9]

CHU A, 1977, ION IMPLANTATION SEM

[10] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].

FAHEY, PM ;

GRIFFIN, PB ;

PLUMMER, JD .

REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384

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