THE EFFICIENCY OF ELECTRON-IMPACT EXCITED LUMINESCENCE IN ZNS THIN-FILM DEVICES

[1] CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878

[2] MEMORY IN THIN-FILM ELECTROLUMINESCENT DEVICES [J]. JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 155 - 173

[3] HOWARD WE, 1981, IBM RC8908 RES REP

[4] PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (06) : 879 - 891

[5] INOGUCHI T, 1974, SID INT S, P84

[6] INOGUCHI T, 1977, TOP APPL PHYS, P222

[7] VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) : 264 - 270

[8] EXCITED-STATE ABSORPTION-SPECTRA OF ZNS-MN [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (07) : 617 - 620

[9] PHYSICAL CONCEPTS OF HIGH-FIELD, THIN-FILM ELECTRO-LUMINESCENCE DEVICES [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 69 (01): : 11 - 66

[10] MACH R, UNPUB PHYS STAT SOL

[1] CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878

[2] MEMORY IN THIN-FILM ELECTROLUMINESCENT DEVICES [J]. JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 155 - 173

[3] HOWARD WE, 1981, IBM RC8908 RES REP

[4] PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (06) : 879 - 891

[5] INOGUCHI T, 1974, SID INT S, P84

[6] INOGUCHI T, 1977, TOP APPL PHYS, P222

[7] VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) : 264 - 270

[8] EXCITED-STATE ABSORPTION-SPECTRA OF ZNS-MN [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (07) : 617 - 620

[9] PHYSICAL CONCEPTS OF HIGH-FIELD, THIN-FILM ELECTRO-LUMINESCENCE DEVICES [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 69 (01): : 11 - 66

[10] MACH R, UNPUB PHYS STAT SOL