SOLUTE DIFFUSION GROWTH OF GAP

被引:8
作者
MORAVEC, F [1 ]
NOVOTNY, J [1 ]
机构
[1] CZECHOSLOVAK ACAD SCI,INST RADIO ENGN & ELECTR,CS-18088 PRAGUE 8,CZECHOSLOVAKIA
关键词
D O I
10.1016/0022-0248(76)90083-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:90 / 98
页数:9
相关论文
共 23 条
[1]  
Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[2]   GALLIUM PHOSPHIDE - ITS PREPARATION IN BULK INGOT FORM [J].
BLUM, SE ;
CHICOTKA, RJ ;
BISCHOFF, BK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :324-&
[3]  
CLAUSS D, 1972, KRISTALL TECHNIK, V8, P935
[4]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ .
PHYSICAL REVIEW, 1967, 157 (03) :655-&
[5]   INCORPORATION OF TELLURIUM IN LIQUID-PHASE EPITAXIAL (LPE) GAP - IMPLICATIONS FOR OXYGEN INCORPORATION [J].
JORDAN, AS ;
TRUMBORE, FA ;
WOLFSTIRN, KB ;
KOWALCHIK, M ;
ROCCASECCA, DD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) :791-799
[6]   NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J].
KANEKO, K ;
AYABE, M ;
DOSEN, M ;
MORIZANE, K ;
USUI, S ;
WATANABE, N .
PROCEEDINGS OF THE IEEE, 1973, 61 (07) :884-890
[7]  
KANEKO K, 1974, J ELECTROCHEM SOC, V12, P556
[8]  
Miller J. F., 1973, Journal of Electronic Materials, V2, P485, DOI 10.1007/BF02655872
[9]  
Moravec F., 1974, Elektrotechnicky Casopis, V25, P328
[10]  
NEIDA ARV, 1974, SOLID STATE TECHNOL, P90