OXIDE FORMATION DURING PLASMA-ETCHING OF SILICON-CONTAINING RESISTS

被引：26

作者：

HARTNEY, MA ^{[1
]}

CHIANG, JN ^{[1
]}

HESS, DW ^{[1
]}

SOANE, DS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1510 / 1512

页数：3

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共 18 条

[1] CHIANG JN, 1989, J APPL PHYS, V65
[2] MECHANISM OF OXYGEN PLASMA-ETCHING OF POLYDIMETHYL SILOXANE FILMS
CHOU, NJ
TANG, CH
PARASZCZAK, J
BABICH, E
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 31 - 33
[3] APPLICATION OF ESCA TO POLYMER CHEMISTRY .16. ELECTRON MEAN FREE PATHS AS A FUNCTION OF KINETIC-ENERGY IN POLYMERIC FILMS DETERMINED BY MEANS OF ESCA
CLARK, DT
THOMAS, HR
[J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1977, 15 (12) : 2843 - 2867
[4] COOPMANS F, 1986, P SOC PHOTO-OPT INS, V633, P126
[5] GOZDZ AS, 1987, ACS SYM SER, V346, P334
[6] HARTNEY MA, IN PRESS ADV RESIST, V6
[7] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY
HILL, JM
ROYCE, DG
FADLEY, CS
WAGNER, LF
GRUNTHANER, FJ
[J]. CHEMICAL PHYSICS LETTERS, 1976, 44 (02) : 225 - 231
[8] SPUTTERING STUDIES OF INSULATORS BY MEANS OF LANGMUIR PROBES
JORGENSO.GV
WEHNER, GK
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2672 - &
[9] SHEATH COLLISION PROCESSES CONTROLLING THE ENERGY AND DIRECTIONALITY OF SURFACE BOMBARDMENT IN O-2 REACTIVE ION ETCHING
JURGENSEN, CW
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 590 - 597
[10] EXPERIMENTAL TESTS OF THE STEADY-STATE MODEL FOR OXYGEN REACTIVE ION ETCHING OF SILICON-CONTAINING POLYMERS
JURGENSEN, CW
SHUGARD, A
DUDASH, N
REICHMANIS, E
VASILE, MJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (05): : 2938 - 2944