LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON OBSERVED BY PICOSECOND PHOTOINDUCED ABSORPTION

被引：22

作者：

STRAIT, J

TAUC, J

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[2] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：589 / 591

页数：3

共 14 条

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DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[2] PICOSECOND CARRIER DYNAMICS IN OPTICALLY ILLUMINATED GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON [J].

KOMURO, S ;

AOYAGI, Y ;

SEGAWA, Y ;

NAMBA, S ;

MASUYAMA, A ;

OKAMOTO, H ;

HAMAKAWA, Y .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :79-81

[3] HOPPING IN EXPONENTIAL BAND TAILS [J].

MONROE, D .

PHYSICAL REVIEW LETTERS, 1985, 54 (02) :146-149

[4] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA .

SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89

[5] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

[6] EFFECTS OF DOPANTS AND DEFECTS ON LIGHT-INDUCED METASTABLE STATES IN A-SI-H [J].

SKUMANICH, A ;

AMER, NM ;

JACKSON, WB .

PHYSICAL REVIEW B, 1985, 31 (04) :2263-2269

[7] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].

STAEBLER, DL ;

WRONSKI, CR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268

[8] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[9]

STRAIT J, UNPUB

[10] TRANSIENT PHOTOCONDUCTIVITY STUDIES OF THE LIGHT SOAKED STATE OF HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :507-509

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