TRANSIENT PHOTOCONDUCTIVITY STUDIES OF THE LIGHT SOAKED STATE OF HYDROGENATED AMORPHOUS-SILICON

被引：50

作者：

STREET, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：507 / 509

页数：3

共 11 条

[1] STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS [J].

COHEN, JD ;

LANG, DV ;

HARBISON, JP ;

SERGENT, AM .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :371-374

[2] DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1981, 24 (12) :7457-7459

[3] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[4] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

[5] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[7] STABILITY OF N-I-P AMORPHOUS-SILICON SOLAR-CELLS [J].

STAEBLER, DL ;

CRANDALL, RS ;

WILLIAMS, R .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :733-735

[8] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[9] SPIN-DEPENDENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H [J].

STREET, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (03) :273-278

[10] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON [J].

STREET, RA ;

KNIGHTS, JC ;

BIEGELSEN, DK .

PHYSICAL REVIEW B, 1978, 18 (04) :1880-1891

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