STABILITY OF N-I-P AMORPHOUS-SILICON SOLAR-CELLS

[1] CARLSON DE, 1980, OCT EL SOC M HOLL

[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[3] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L357 - L360

[4] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211

[5] METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS USING AMORPHOUS SI-F-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 826 - 828

[6] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (08) : 851 - 856

[7] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 705 - 706

[8] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268

[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294

[10] TAWADA Y, 1980, 2ND PHOT SCI ENG C J

[1] CARLSON DE, 1980, OCT EL SOC M HOLL

[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[3] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L357 - L360

[4] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211

[5] METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS USING AMORPHOUS SI-F-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 826 - 828

[6] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (08) : 851 - 856

[7] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 705 - 706

[8] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268

[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294

[10] TAWADA Y, 1980, 2ND PHOT SCI ENG C J