Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

被引：28

作者：

Belyakov, VV

Pershenkov, VS

Shalnov, AV

ShvetzovShilovsky, IN

机构：

[1] Moscow Engineering Physics Institute, Moscow 115409

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.488763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron traps in oxide. The experimental results on positive charge build-up at low dose-rates and small electric field in oxide are presented. The use of MOS transistor in bipolar mode for investigation of surface peripheral recombination current in bipolar transistor and extraction of MOS structure physical parameters is described.

引用

收藏

页码：1660 / 1666

页数：7

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